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PBSS2540E 500 mA NPN low VCEsat (BISS) transistor

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Description

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev.01 * 4 May 2005 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 G.
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

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Applications

* s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e. g. motors, fans) 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base Min IC = 500 mA; IB = 50 mA [1] Symbol Parameter collector-emitter voltage co

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