* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s
PBSS2540E Datasheet (133.82 KB)
PBSS2540E
133.82 KB
500 ma npn low vcesat (biss) transistor.
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 01
* 4 May 2005
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