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PBSS2540MB - NPN transistor

PBSS2540MB Description

PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev.1 * 4 April 2012 Product data sheet 1.Product profile 1.1 General descripti.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic pack.

PBSS2540MB Features

* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation voltage VCEsat

PBSS2540MB Applications

* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat generation
* AEC-Q101 qualified
* Reduced Printed-Circuit Board (PCB) requirements
* LCD backlighting
* Drivers in low supply voltage applications (e. g. lamps and LEDs)

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