.
Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
Infineon
HYB25DC512160CF - 512-Mbit Double-Data-Rate SDRAM
www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM.
STMicroelectronics
M27C320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W.
STMicroelectronics
M27C322 - 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO.
STMicroelectronics
M27V320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27V320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM s 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32.
STMicroelectronics
M27C202 - 2 Mbit 128Kb x16 UV EPROM and OTP EPROM
M27C202 2 Mbit (128Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Curre.
STMicroelectronics
M27C1024 - 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur.
Samsung semiconductor
K4R271669E - 128Mbit RDRAM(E-die)
K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R2.
Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
ST Microelectronics
M29W160EB - 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program,.
AMD
AM41PDS3224D - Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
Am41PDS3224D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG ).
STMicroelectronics
NAND01G-N - 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package
www.DataSheet4U.com NAND01G-N 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA .
STMicroelectronics
M28W320FSB - 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories
www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories.
Hynix Semiconductor
H55S5122EFR - 512Mbit (16Mx32bit) Mobile SDR Memory
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
Hynix Semiconductor
H5MS2562JFR-E3M - Mobile DDR SDRAM 256Mbit (16M x 16bit)
256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of .
Microchip
SST38VF6401 - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
Not recommended for new designs. Please use SST38VF6401B/6402B/6403B/64040B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 .
STMicroelectronics
M29W116BT - 16 Mbit Low Voltage Single Supply Flash Memory
M29W116BT M29W116BB 16 Mbit (2Mb x8, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROG.
Cypress Semiconductor
CY15B101N - 1-Mbit (64K x 16) Automotive F-RAM Memory
CY15B101N 1-Mbit (64K × 16) Automotive F-RAM Memory 1-Mbit (64K × 16) Automotive F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F.
Numonyx
M58BW016FB - 16 Mbit 3V supply Flash memories
M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 .