Infineon
HYR166449G-845 - Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR16xx49G 64MB & 128MB Rambus RIMM Modules
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
Overview The Direct Rambus™ RIMM™ module is a general pu
(8 views)
GigaDevice
GD25Q16 - 16Mbit Dual and Quad SPI Flash
25Q16BSIG
FEATURES
◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page
◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W
(8 views)
Infineon
HYR163240G-653 - Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR16xx40G / HYR18xx40G Rambus RIMM Modules
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
Overview The Direct Rambus™ RIMM™ module is a general pu
(7 views)
Qimonda
HYB25DC512160B - 512-Mbit Double-Data-Rate SDRAM
www.datasheet4u.com
April 2007
HYB25DC512800B[E/F] HYB25DC512160B[E/F]
512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products
Internet
(7 views)
UniIC
SCB18X128160AF-10E2 - 128Mbit DDR OPI Xccela PSRAM
Sept. 2024
SCB18X128XX0AF
128Mbit DDR OPI Xccela PSRAM EU RoHS Compliant Products
Data Sheet
Rev. H
Data Sheet SCB18X128XX0AF 128Mbit DDR OPI Xccela
(7 views)
Infineon
HYR163249G-653 - Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR16xx49G 64MB & 128MB Rambus RIMM Modules
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
Overview The Direct Rambus™ RIMM™ module is a general pu
(6 views)
Toshiba
TC58FVB321 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
TC58FVT321/B321FT/XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTI
(6 views)
Toshiba
TC58FVM6T2AFT65 - 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM6(T/B)2A(FT/XB)65
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The
(6 views)
Infineon Technologies
HYB39S128160CT - 128-MBit Synchronous DRAM
HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM
www.DataSheet4U.com
128-MBit Synchronous DRAM
• High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1
(6 views)
Cypress Semiconductor
CY7C1916BV18 - 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18
18-Mbit DDR-II SRAM 2-Word Burst Architecture
Features
• 18-Mbit density (2M x 8, 2M x 9, 1M x 18
(5 views)
Cypress Semiconductor
CY7C1615KV18 - 144-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1613KV18/CY7C1615KV18
144-Mbit QDR® II SRAM Four-Word Burst Architecture
144-Mbit QDR® II SRAM Four-Word Burst Architecture
Features
■ Separate i
(4 views)
Cypress Semiconductor
CY7C1316CV18 - (CY7C1xxxCV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1316CV18, CY7C1916CV18 CY7C1318CV18, CY7C1320CV18
18-Mbit DDR-II SRAM 2-Word Burst Architecture
Features
■ ■ ■ ■ ■
Functional Description
The CY
(4 views)
Cypress Semiconductor
CY7C11651KV18 - 18-Mbit QDR II SRAM 4-Word Burst Architecture
18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C
(4 views)
Infineon
HYB25DC512160CE - 512-Mbit Double-Data-Rate SDRAM
www.DataSheet4U.com
D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5
HYB25DC512800C[E/F] HYB25DC512160C[E/F]
512-Mbit Double-Data-Rate SDRAM DDR SDRAM
(3 views)
Cypress Semiconductor
CY62156ESL - 8-Mbit (512 K x 16) Static RAM
CY62156ESL MoBL®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
■ High Speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and
(3 views)
Cypress Semiconductor
CY62168GE - 16-Mbit (2M words x 8 bits) Static RAM
CY62168G/CY62168GE MoBL®
16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC)
16-Mbit (2M words × 8 bits) Static RAM with Error-Co
(3 views)
Intel Corporation
DA28F016XS-15 - 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E
n n n n n
28F016XS 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
n n n n n n
Backwards-Compatible with 28F008SA Command-Set 2 µA Typic
(3 views)
Cypress Semiconductor
CY7C1061AV33 - 16-Mbit (1 M 횞 16) Static RAM
CY7C1061AV33
16-Mbit (1 M × 16) Static RAM
16-Mbit (1 M × 16) Static RAM
Features
■ High speed ❐ tAA = 10 ns
■ Low active power ❐ 990 mW (max)
■ Oper
(3 views)
ISSI
IS42S81600D - 128-MBIT SYNCHRONOUS DRAM
IS42S81600D IS42S16800D
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
JULY 2008
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous;
(3 views)
Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(3 views)