Hitachi Semiconductor
HM51S4260C - 262144-word x 16-bit Dynamic Random Access Memory
HM514260C Series HM51S4260C Series
262,144-word × 16-bit Dynamic Random Access Memory
ADE-203-260A (Z) Rev. 1.0 Jun. 12, 1995
Description
The Hitach
(32 views)
Hitachi Semiconductor
HM6116 - 2048-word X 8bit High Speed CMOS Static RAM
(21 views)
Toshiba Semiconductor
TC5516AFL-2 - 2048 WORD x 8 BIT CMOS STATIC RAM
(14 views)
Cypress Semiconductor
CY7C10612GN - 16-Mbit (1M words x 16 bit) Static RAM
CY7C1061GN/CY7C10612GN
16-Mbit (1M words × 16 bit) Static RAM
16-Mbit (1M words × 16 bit) Static RAM
Features
■ High speed ❐ tAA = 10 ns/15 ns
■ Low
(14 views)
Texas Instruments
TMS418169 - 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
D Organization . . . 1 048576 Words by 16 Bits D Single 5-V Power Supp
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Mitsubishi
M5M27C202JK-10 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
(12 views)
GE
CDM6116A - CMOS 2048-Word by 8-Bit Static RAM
Random-Acee.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM6116A
Product Preview
A7 24 Vee
AS 23 A8
A5 3 A4 4
22 A9
21 WE
A3 20 OE
(11 views)
Hitachi Semiconductor
HM62V16256C - 4 M SRAM (256-kword x 16-bit)
HM62V16256C Series
4 M SRAM (256-kword × 16-bit)
ADE-203-1099D (Z) Rev. 1.0 Jan. 31, 2001
Description
The Hitachi HM62V16256C Series is 4-Mbit stati
(11 views)
Sanyo
LC321664BT-70 - 1 MEG (65536 words X 16 bits) DRAM
(11 views)
Integrated Silicon Solution
IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
FEBRUARY 2008
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully
(10 views)
Sanyo
LC321667BT-70 - 1 MEG (65536 words X 16 bits) DRAM
(10 views)
NEC
MC-4516CD64PS - 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CD64ES, 4516CD64PS
16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-4516CD6
(10 views)
Mitsubishi
M5M51016BRT-12VL - 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51016BTP,RT-12VL, -12VLL
1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM
DESCRIPTION
The M5M51016
(10 views)
STMicroelectronics
NAND256-A - 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
NAND128-A, NAND256-A NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES
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Hitachi Semiconductor
HM5164805F - (HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
HM5164805F Series HM5165805F Series
64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh
ADE-203-1057B (Z) Rev. 2.0 Nov. 30, 1999 Description
The
(10 views)
OKI electronic componets
MSM56V16160F - 2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
Semiconductor
MSM56V16160F
2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM
This version : Sep.1999
DESCRIPTION
The MSM56V16160F is a 2-Bank ´
(10 views)
Toshiba Semiconductor
TC5516AFL - 2048 WORD x 8 BIT CMOS STATIC RAM
(10 views)
Elpida Memory
EDJ4216EFBG - 256M words x 16 bits 4G bits DDR3L SDRAM
COVER
PRELIMINARY DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b
(10 views)
Texas Instruments
CD74HC40105 - 4-Bit x 16-Word FIFO Register
Data sheet acquired from Harris Semiconductor SCHS222C
February 1998 - Revised October 2003
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
High
(10 views)
Mitsubishi
M5M4V16169DTP-8 - 16M (1M-WORD BY 16-BIT) CACHED DRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary This docume
(9 views)
