16-Word Datasheet | Specifications & PDF Download

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Ordering number : EN*5793 CMOS IC LC378000RP Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM Prelimi

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(Rev. 1.0) MITSUBISHI LSIs M5M467405/465405DJ,DTP -5,-6,-5S,-6S M5M467805/465805DJ,DTP -5,-6,-5S,-6S M5M465165DJ,DTP -5,-6,-5S,-6S EDO MODE 67108864

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CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18

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CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■

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Data sheet acquired from Harris Semiconductor SCHS222C February 1998 - Revised October 2003 CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105 High

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1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM GM71C18163C GM71CS18163CL Description The GM71C(S)18163C/CL is the new generation dynamic RAM organized 1,

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CY7C1613KV18/CY7C1615KV18 144-Mbit QDR® II SRAM Four-Word Burst Architecture 144-Mbit QDR® II SRAM Four-Word Burst Architecture Features ■ Separate i

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DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,

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CY7C1316CV18, CY7C1916CV18 CY7C1318CV18, CY7C1320CV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description The CY

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5916384S high density memory module is a CMOS random access memory organized in 16 Meg x 9 bit word

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CY7C1668KV18 CY7C1670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 144-Mbit DDR II+ SRAM Two-Word Burst Architectur

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Ordering number : EN4795C CMOS LSI LC321664AJ, AM, AT-80 1 MEG (65536 words × 16 bits) DRAM Fast Page Mode, Byte Write Overview The LC321664AJ, AM,

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Ordering number : EN*5085A CMOS LSI LC322271J, M, T-70/80 2 MEG (131072 words × 16 bits) DRAM Fast Page Mode, Byte Write Preliminary Overview The LC

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OKI Semiconductor MR26V25655J 8M–Word × 32–Bit or 16M–Word × 16–Bit Page Mode FEDR26V25655J-02-05 Issue Date: Jun. 8, 2004 P2ROM PIN CONFIGURATION (

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,

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