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M5M27C202JK-10 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
.LC322271T-70 - 2 MEG (131072 words X 16 bits) DRAM
Ordering number : EN*5085A CMOS LSI LC322271J, M, T-70/80 2 MEG (131072 words × 16 bits) DRAM Fast Page Mode, Byte Write Preliminary Overview The LC.IDT39C705B - 16-Word By 4-Bit Dual-Port RAM
FEATURES: • Fast -Available in either industry-standard speed or 20% speed upgraded versions • Low-power CEMOS'· -Military - 50mA (max.) -Commercial -.HB56SW3272ESK-5 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 .HB56SW3272ESK-6 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 .A29DL324 - 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324 Series 32M-Bit CMOS Low Voltage Dual Operation Flash Memory Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) Features.CY7C1062G - 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1062G CY7C1062GE 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512 K words × 32 bits) Static RAM with Erro.CY7S1061GE - 16-Mbit (1 M words x 16 bit) Static RAM
CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and .CY7C1663KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C1663KV18/CY7C1665KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 144-Mbit QDR® II+ SRAM Four-Word Burst Archite.IS42S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz .LC382161T-17 - 2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
.MR27V12800J - 8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
OKI Semiconductor MR27V12800J P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit FEATURES ·8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically swit.M5M27C202K-10 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
.M5M27C202VP-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
.M5M417400CTP-7 - FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 41.M5M465165DTP-6 - EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
(Rev. 1.0) MITSUBISHI LSIs M5M467405/465405DJ,DTP -5,-6,-5S,-6S M5M467805/465805DJ,DTP -5,-6,-5S,-6S M5M465165DJ,DTP -5,-6,-5S,-6S EDO MODE 67108864.