16-word datasheet | Specifications & PDF Download

CY7C1618KV18 - 144-Mbit DDR II SRAM Two-Word Burst Architecture

CY7C1618KV18/CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture 144-Mbit DDR II SRAM Two-Word Burst Architecture Features ■ 144-Mbit densi

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Texas Instruments

CD74HCT40105 - 4-Bit x 16-Word FIFO Register

Data sheet acquired from Harris Semiconductor SCHS222C February 1998 - Revised October 2003 CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105 High

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Cypress Semiconductor

CY7C1615KV18 - 144-Mbit QDR II SRAM Four-Word Burst Architecture

CY7C1613KV18/CY7C1615KV18 144-Mbit QDR® II SRAM Four-Word Burst Architecture 144-Mbit QDR® II SRAM Four-Word Burst Architecture Features ■ Separate i

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ISSI

IS42S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Ful

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ISSI

IS42S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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NEC

UPD4416004 - 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777

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Integrated Silicon Solution

IS45S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fu

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Cypress Semiconductor

CY7C1643KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture

CY7C1643KV18/CY7C1645KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 144-Mbit QDR® II+ SRAM Four-Word Burst Archite

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Sony Corporation

CXK5B16120J - 65536-word X 16-bit High Speed Bi-CMOS Static RAM

CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Descriptio

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Hitachi Semiconductor

HM6288 - 16384-word x 4-bit High Speed CMOS Static RAM

HM6288 Series 16384-word × 4-bit High Speed CMOS Static RAM Description The Hitachi HM6288 is a high speed 64k static RAM organized as 16-kword × 4-b

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ACCUTEK

AK5916384G - 16777216 Word by 9 Bit CMOS Dynamic Random Access Memory

MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5916384S high density memory module is a CMOS random access memory organized in 16 Meg x 9 bit word

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Cypress Semiconductor

CY7C1612KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture

CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■

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Elpida Memory

HM5259405B-75 - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM

HM5259165B-75/A6 HM5259805B-75/A6 HM5259405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-

(18 views)