1620 Datasheet | Specifications & PDF Download

AC23C16200B Description 1MX16/2MX8 BIT CMOS MASK ROM The AC23C16200B high performance read only memory is organized either as 2,097,152 x 8 bit (byt

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www.DataSheet4U.com LAMPEX LM16200 [16 x 2, 1/16 MUX] 8.0 1 ALPHANUMERIC DOT MATRIX LCM DIMENSION IN MM 9.5(13.5)* 5.0(9.0)* 80.0±0.5 [3.15±0.020]

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www.DataSheet.co.kr ® STPR1620CG/CT/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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DA16200MOD Ultra Low Power Wi-Fi SoC Module Datasheet General Description The DA16200MOD is a fully integrated Wi-Fi® module with ultra-low power co

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U1620RG thru U1660RG ® U1620RG thru U1660RG Pb Pb Free Plating Product 16 Ampere Surface Mount Common Anode Ultra Fast Recovery Rectifier Featur

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144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchrono

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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SM1620B ICIGBG-IZV1.0 SM1620B SM1620B LED ， MCU 、 、LED 、。  CMOS  VDD 3.3V-5.0V   ：4 ×9 —7 ×6  ：6×1  （ 8 ）  （CLK，STB，DI/O）  ： RC

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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DA16200 Ultra-Low-Power Wi-Fi SoC Datasheet General Description The DA16200 is a highly integrated ultra-low-power Wi-Fi® system on a chip (SoC), wh

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Datasheet MLX16201-Jxx Intelligent relay driver for automotive applications ROM version for series production 1. Features CPU and Interrupts • WORD-

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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www.vishay.com VS-MUR1620CTPbF, VS-MUR1620CT-N3 Vishay Semiconductors Ultrafast Rectifier, 2 x 8 A FRED Pt® TO-220AB Base common cathode 2 2 Commo

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3.3 V 16M × 64/72-Bit SDRAM Modules 3.3 V 32M × 64/72-Bit SDRAM Modules 3.3 V 64M × 64/72-Bit SDRAM Modules PC100-168 pin unbuffered DIMM Modules Prel

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T1620T-8I, T1635T-8I Snubberless™ 16 A Triac Features ■ High static and dynamic commutation ■ Three quadrants ■ Snubberless device ■ Package is RoHS

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with inte

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2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low driv

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