16W Datasheet | Specifications & PDF Download

ESMT Features z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors • We declare that the material of product compliance with RoHS requirements. • S- Prefix for A

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θ μ≤ µA Ʊ Drain Current (A) Typical Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 8V 7V 6V Pch= 250W 5V 4V 3V 2V 20 40 Drain - Source

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www.DataSheet4U.com MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $

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Alfa-MOS Technology General Description AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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Chunghwa Picture Tubes, Ltd. Technical Specification To : AMCOM Date : 2008.12.03 CPT TFT-LCD CLAA 216WA01 ACCEPTED BY： APPROVED BY CHECKED BY

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θ μ≤ µA Ʊ Drain - Source Voltage (V) Drain Current (A) Drain Current (A) Typical Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 VGS = 8V

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BAS216WS High-speed switching diode Features • Small ceramic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 75V • Rep

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M24C16-W M24C16-R M24C16-F Datasheet 16-Kbit serial I2C bus EEPROM TSSOP8 (DW) 169 mil width SO8 (MN) 150 mil width UFDFPN8 (MC) DFN8 - 2x3 mm UFDF

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of 1996 Sep 10 1999 May 06 Ph

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE BAS216WS SOD-323 PLASTIC

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GSDSS12W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 1.0A Packages Features „ Ideally s

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® WON-TOP ELECTRONICS BAS16W SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS16WT1/D Silicon Switching Diode 3 CATHODE 1 ANODE BAS16WT1 Motorola Preferred Devi

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www.DataSheet4U.com BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (T

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g n i h tors c t i a Sw egul R STR-A6151 AND STR-A6159 Universal-Input/13 or 16 W Flyback Switching Regulators The STR-A6151 and STR-A6159 are PRC t

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE BJ AND MUST

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage V

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage V

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