18-CHANNEL Datasheet | Specifications & PDF Download

HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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AOL1718 30V N-Channel MOSFET SRFET TM General Description SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky d

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www.vishay.com SiRA18DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUM

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www.DataSheet4U.com ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description This new gene

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SHENZHEN FUMAN ELECTRONICS CO., LTD. TC1181 (：S&CIC1060) 2 3 、  MOS  、、  D  （1.0Ω） 、  1.8A, 2.5A   DIP-8、SOP-8  、 I/O

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www.vishay.com SiRA18DDP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SU

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8184P,TA8184F Dual Channel Voltage/Tone Control IC TA8184P/F The TA8184P, TA8184F is

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UNISONIC TECHNOLOGIES CO., LTD 18NM60 Power MOSFET 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18NM60 uses UTC’s advanced proprietary, p

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ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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2SK1849-VB 2SK1849-VB Datasheet N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 100 0

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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AOD4186 40V N-Channel MOSFET General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extr

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UNISONIC TECHNOLOGIES CO., LTD 18N50-C 18A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N50-C provide excellent RDS(ON), low ga

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U U FEATURES ■ 16-Bit 150ksps ADCs in MSOP Package ■ Single 3V Supply ■ Low Supply Current: 450µA (Typ) ■ Auto Shutdown Reduces Supply Current to 10µ

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18T10GH-VB 18T10GH-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1

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