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NCEP60T18

N-Channel Super Trench Power MOSFET

NCEP60T18 Features

* VDS =60V,ID =180A RDS(ON) < 2.9mΩ @ VGS=10V (Typ:2.5mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pin assignment Application

* DC/DC Converter

* Id

NCEP60T18 General Description

The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

NCEP60T18 Datasheet (317.02 KB)

Preview of NCEP60T18 PDF

Datasheet Details

Part number:

NCEP60T18

Manufacturer:

NCE Power Semiconductor

File Size:

317.02 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP60T18 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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