NCEP60T12A

N-Channel Super Trench Power MOSFET

NCE Power Semiconductor

NCEP60T12A Features

* VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram Marking and p

NCEP60T12A General Description

The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP60T12A Datasheet (457.38 KB)

NCEP60T12A Datasheet Preview — Preview of NCEP60T12A PDF

Datasheet Details

Part number:

NCEP60T12A

Manufacturer:

NCE Power Semiconductor

File Size:

457.38 KB

Description:

N-channel super trench power mosfet.

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NCEP60T12A N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP60T12A Features

NCEP60T12A General Description

Datasheet Details

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Description:

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