NCEP60T12AK Datasheet - NCE Power Semiconductor

NCEP60T12AK N-Channel Super Trench Power MOSFET

The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP60T12AK Features

* VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converte

NCEP60T12AK-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCEP60T12AK

Manufacturer:

NCE Power Semiconductor

File Size:

455.22 KB

Description:

N-channel super trench power mosfet.

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NCEP60T12AK NCEP60T12AK N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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