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NCEP60T15AG

N-Channel Super Trench Power MOSFET

NCEP60T15AG Features

* VDS =60V,ID =150A RDS(ON) < 3.0mΩ @ VGS=10V (Typ:2.7mΩ) RDS(ON) < 3.3mΩ @ VGS=4.5V (Typ:2.9mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram Marking and

NCEP60T15AG General Description

The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP60T15AG Datasheet (338.66 KB)

Preview of NCEP60T15AG PDF

Datasheet Details

Part number:

NCEP60T15AG

Manufacturer:

NCE Power Semiconductor

File Size:

338.66 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP60T15AG N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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