* TrenchFET® Power MOSFET
* Package with Low Thermal Resistance
* AEC-Q101 Qualifiedd
* 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS
NCE01H16 Datasheet (256.82 KB)
NCE01H16
VBsemi
256.82 KB
N-channel mosfet.
NCE01H16-VB
NCE01H16-VB Datasheet N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configurat.
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