NCE01H14C Datasheet, Mosfet, NCE Power Semiconductor

NCE01H14C Features

• Mosfet
• VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current <

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Part number:

NCE01H14C

Manufacturer:

NCE Power Semiconductor

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339.36kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H14C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01H14C Application

• Applications Pb Free Product NCE01H14C General Features
• VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ)
• High densi

TAGS

NCE01H14C

NCE Power Semiconductor

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