NCE01H14D Datasheet, Mosfet, NCE Power Semiconductor

NCE01H14D Features

• Mosfet
• VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.9mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current <

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Part number:

NCE01H14D

Manufacturer:

NCE Power Semiconductor

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353.79kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H14D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01H14D Application

• Applications General Features
• VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.9mΩ)
• High density cell design for ultra lo

TAGS

NCE01H14D

NCE Power Semiconductor

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