NCE01H14T Datasheet, Mosfet, NCE Power Semiconductor

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Part number:

NCE01H14T

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NCE Power Semiconductor

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

✔ NCE01H14T Features

VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stab

✔ NCE01H14T Application

General Features
VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ)
High density cell design fo

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NCE01H14T N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor