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NCE01H14T - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01H14T
Manufacturer	NCE Power Semiconductor
File Size	320.64 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H14T-NCEPowerSemiconductor.pdf

NCE01H14T Product details

Description

The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Jun 6, 2015 |