Datasheet4U.com

NCE01H10 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

📥 Download Datasheet

NCE01H10 Datasheet Preview — Preview of NCE01H10 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	NCE01H10
Manufacturer	NCE Power Semiconductor
File Size	338.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H10-NCEPowerSemiconductor.pdf

NCE01H10 Product details

Description

The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

📁 NCE01H10 Similar Datasheet

NCE01H16 - N-Channel MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)
NCE1570 - N-Channel 150V MOSFET (VBsemi)
NCE2025I - N-Channel MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE01H10D - N-Channel Enhancement Mode Power MOSFET
NCE01H11 - N-Channel Enhancement Mode Power MOSFET
NCE01H13 - N-Channel Enhancement Mode Power MOSFET
NCE01H13D - N-Channel Enhancement Mode Power MOSFET
NCE01H13WD - N-Channel Enhancement Mode Power MOSFET
NCE01H14 - N-Channel Enhancement Mode Power MOSFET

Published: Jun 6, 2015 |