NCE01H10 Datasheet, Mosfet, NCE Power Semiconductor

NCE01H10 Features

• Mosfet
• VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE01H10

Manufacturer:

NCE Power Semiconductor

File Size:

338.66kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE01H10 Application

• Applications General Features
• VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ)
• Special process technology for high E

TAGS

NCE01H10

NCE Power Semiconductor

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