NCE01H13 Datasheet, Mosfet, NCE Power Semiconductor

NCE01H13 Features

• Mosfet
• VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.3mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE01H13

Manufacturer:

NCE Power Semiconductor

File Size:

354.06kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE01H13 Application

• Applications Pb Free Product NCE01H13 General Features
• VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.3mΩ)
• High density

TAGS

NCE01H13

NCE Power Semiconductor

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