Datasheet Details
- Part number
- NCE02H10T
- Manufacturer
- H&M Semiconductor
- File Size
- 430.79 KB
- Datasheet
- NCE02H10T-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
NCE02H10T Description
N-Channel Enhancement Mode Power MOSFET .
The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
NCE02H10T Features
* VDS =200V,ID =100A RDS(ON)
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