NCE0205IA Datasheet, Mosfet, NCE Power Semiconductor

NCE0205IA Features

• Mosfet
• VDS = 200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE0205IA

Manufacturer:

NCE Power Semiconductor

File Size:

279.48kb

Download:

📄 Datasheet

Description:

Nce n-channel enhancement mode power mosfet. The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE0205IA Application

• Applications General Features
• VDS = 200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
• High density cell design for ultra low R

TAGS

NCE0205IA

NCE Power Semiconductor

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