NCE0203S Datasheet, Mosfet, NCE Power Semiconductor

NCE0203S Features

• Mosfet
• VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE0203S

Manufacturer:

NCE Power Semiconductor

File Size:

329.33kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE0203S Application

• Applications General Features
• VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
• High density cell design for ultra low

TAGS

NCE0203S

NCE Power Semiconductor

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