NCE0205I Datasheet, Mosfet, NCE Power Semiconductor

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Part number:

NCE0205I

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NCE Power Semiconductor

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

✔ NCE0205I Features

VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V （Typ：520mΩ）
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate t

✔ NCE0205I Application

General Features
VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V （Typ：520mΩ）
High density cell design for

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NCE0205I N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor