NCE0208IA Datasheet, Mosfet, NCE Power Semiconductor

NCE0208IA Features

• Mosfet
• VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE0208IA

Manufacturer:

NCE Power Semiconductor

File Size:

287.13kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE0208IA Application

• Applications General Features
• VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
• High density cell design for ultra low Rdso

TAGS

NCE0208IA

NCE Power Semiconductor

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