1888 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD P1888 Preliminary PWM CONTROL 3A STEP-DOWN CONVERTER CMOS IC  DESCRIPTION UTC P1888 consists of 3A step-down swit

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Aluminum electrolytic capacitors, Aluminum electrolytic capacitors – single-ended capacitors Series/Type: B41888 The following products presented in

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1888 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20C package ·DARLINGTON ·

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Ordering number:EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switc

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RoHS Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave V

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PART OBSOLETE – NO ALTERNATE PART AH1888 MICROPOWER, GENERAL-SENSITIVE HALL EFFECT SWITCH Description The AH1888 micro power Omni-polar Hall Effect s

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NTE1888 Integrated Circuit Horizontal and Vertical Deflection Monitor Features: D Direct Line Darlington Drive D Direct Frame Yoke Drive (± 1A) D Comp

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Ordering number:EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switc

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Ordering number : EN4823A Monolithic Linear IC LA1888NM Car Stereo Single-Chip Tuner IC

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PNP Silicon AF Transistors BC 856 BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter

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www.DataSheet4U.com SD1888-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . . 1.65 GHz 28 VOLTS EFFICIENCY 50% MIN. CLASS C OP

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1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830,1S1885,1S1887,1S1888 General Purpose Rectifier Applications Unit: mm · A

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Aluminum electrolytic capacitors Single-ended capacitors Series/Type: www.DataSheet4U.com B41888 December 2006 Date: © EPCOS AG 2007. Reproduction

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K7P323688M K7P321888M 1Mx36 & 2Mx18 SRAM www.DataSheet4U.com 32Mb M-die LW SRAM Specification 119BGA with Pb & Pb-Free (RoHS compliant) INFORMATIO

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround 90 dB Dynamic Range 20-Bit PCM DACs S/PDIF Output Integrated Stereo Headphon

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isc Silicon NPN Darlington Power Transistor 2SD1888 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- :

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1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon Diffused Type 1S1885A,1S1887A,1S1888A General Purpose Rectifier Applications · Average Forward Cur

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1SG1885, 1SG1887, 1SG1888 General Purpose Plastic Rectifiers Reverse Voltage 100 to 600 Volts Forward Current 1.2 Amperes Features ‹ Low cost ‹ Low l

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www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High rel

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HM-6518/883 March 1997 1024 x 1 CMOS RAM Description The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technol

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