2SD1888 Datasheet, Transistor, INCHANGE

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2SD1888

Manufacturer:

INCHANGE

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206.19kb

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📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)

High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A

2SD1888 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

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2SD1888

INCHANGE

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