2SD1888 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1888 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A). Complement to Type.

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Datasheet Specifications

Part number: 2SD1888
Manufacturer: INCHANGE
File Size: 206.19 KB
Datasheet: 2SD1888-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Col

2SD1888 Distributors

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2SD1888 NPN Transistor INCHANGE

INCHANGE 2SD1888-like datasheet