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2SD1888 Datasheet - INCHANGE

2SD1888 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) *Complement to Type 2SB1339 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier applic.

2SD1888-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1888

Manufacturer:

INCHANGE

File Size:

206.19 KB

Description:

Npn transistor.

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