2SD1881 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD1881
Manufacturer	Sanyo Semicon Device
File Size	89.18 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1881_SanyoSemiconDevice.pdf

High speed (tf=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
On-chip damper diode. Package Dimensions unit:mm 2039D [2SD1881] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curren.

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Published: Apr 3, 2005 |