2SD1881 - NPN Triple Diffused Planar Silicon Transistor
2SD1881 Features
* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SD1881] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123 5.45 5.
