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2SD1882 Datasheet - Sanyo Semicon Device

2SD1882 - NPN Triple Diffused Planar Silicon Transistor

2SD1882 Features

* High speed (tf=100ns).

* High breakdown voltage (VCBO=1500V).

* High reliability (adoption of HVP process). Package Dimensions unit:mm 2039D [2SD1882] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol

2SD1882_SanyoSemiconDevice.pdf

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Datasheet Details

Part number:

2SD1882

Manufacturer:

Sanyo Semicon Device

File Size:

88.20 KB

Description:

Npn triple diffused planar silicon transistor.

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