2SD1882 - NPN Triple Diffused Planar Silicon Transistor
2SD1882 Features
* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process). Package Dimensions unit:mm 2039D [2SD1882] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol
