* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process). Package Dimensions unit:mm 2039D [2SD1882] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol
2SD1882
Sanyo Semicon Device
88.20 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN2429 NPN Triple Diffused Planar Silicon Transistor 2SD1882 Color TV Horizontal Deflection Output Applications Applications C.
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