2SD1880 - NPN Triple Diffused Planar Silicon Transistor
2SD1880 Features
* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
