1952 Datasheet | Specifications & PDF Download

Features • 2 low side output channels sharing common ground • 1 high side output channel • CMOS Schmitt trigger inputs with pull down resistor • Under

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A19520 Vibration-Tolerant Hall-Effect Transmission Speed and Direction Sensor IC FEATURES AND BENEFITS • Differential Hall-effect sensor measures rin

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UP1952 12V MOSFET Drivers with Output Disable for Single Phase Synchronous-Rectified Buck Converter General Description Features The UP1952 is a

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PAC195X Single/Multi-Channel Power Monitor with Accumulator, 32V Full-Scale Range Features • High-Side/Low-Side Current Monitor with One, Two, Three

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NTE1952 Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 8V, 1A Description: The NTE1952 positive voltage regulator feat

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PAC195X Single/Multi-Channel Power Monitor with Accumulator, 32V Full-Scale Range Features • High-Side/Low-Side Current Monitor with One, Two, Three

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CXP81952/81960 CMOS 8-bit Single Chip Microcomputer Description The CXP81952/81960 is a CMOS 8-bit microcomputer which consists of A/D converter, seri

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Document Number: 90199 www.vishay.com 665 Free Datasheet http://www.datasheet4u.com/ Document Number: 90199 666 Free Datasheet http://www.datasheet

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D A T A S H E E T Lighting Imaging Telecom Sensors Channel Photomultipliers and Modules MH Series CPM Modules Ultra High Sensitivity Channel Pho

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Elektronische Bauelemente CZD1952 -6A, -100V PNP High Speed Switching Transistor RoHS Compliant Product DESCRIPTION A suffix of “-C” specifies hal

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D A T A S H E E T Lighting Imaging Telecom Sensors Channel Photomultipliers and Modules MH Series CPM Modules Ultra High Sensitivity Channel Pho

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plerowTM ALN1952 www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module

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D A T A S H E E T Lighting Imaging Telecom Sensors Channel Photomultipliers and Modules MD Series CPM Modules Ultra High Sensitivity Gateable Ch

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2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE

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June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION The MGF1952A is designed for

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www.DataSheet4U.com 19-5309; Rev 0; 6/10 TION KIT EVALUA BLE IL AVA A Ultra-Low-Power, Octal, 12-Bit, 50Msps, 1.8V ADC with Serial LVDS Outputs Gen

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