1N250 Datasheet | Specifications & PDF Download

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS V

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High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V

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Ie C lN248B thru lN250B, lN1191 thru lN1198 lN1195A thru lNl198A 1N3213,.1 N3214 CASE 42 (DO-5) Medium current silicon rectifiers. Unique doublecase

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Ie C lN248B thru lN250B, lN1191 thru lN1198 lN1195A thru lNl198A 1N3213,.1 N3214 CASE 42 (DO-5) Medium current silicon rectifiers. Unique doublecase

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RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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