1N250 Datasheet | Specifications & PDF Download

1N250 SILICON POWER RECTIFIER

IXTH1N250 (IXYS)

High Voltage Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS V

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IXTT1N250HV (IXYS)

High Voltage Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V

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1N248C (General Electric)

(1N248C - 1N250C) Silicon Rectifier

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1N250C (General Electric)

(1N248C - 1N250C) Silicon Rectifier

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RT1N250S (Isahaya Electronics)

Transistor

RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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1N250 (Microsemi Corporation)

SILICON POWER RECTIFIER

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1N249C (General Electric)

(1N248C - 1N250C) Silicon Rectifier

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1N2500 (Solid State)

Zener Diode

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1N250B (Motorola)

Medium current silicon rectifiers

Ie C lN248B thru lN250B, lN1191 thru lN1198 lN1195A thru lNl198A 1N3213,.1 N3214 CASE 42 (DO-5) Medium current silicon rectifiers. Unique doublecase

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1N250C (Motorola)

Medium current silicon rectifiers

Ie C lN248B thru lN250B, lN1191 thru lN1198 lN1195A thru lNl198A 1N3213,.1 N3214 CASE 42 (DO-5) Medium current silicon rectifiers. Unique doublecase

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RT1N250C (Isahaya Electronics)

Transistor

RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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RT1N250U (Isahaya Electronics)

Transistor

RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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RT1N250M (Isahaya Electronics)

Transistor

RT1N250X SERIES DESCRIPTION RT1N250X is a one chip transistor with built-in bias resistor,PNP type is RT1P250X. FEATURE ・Built-in bias resistor (R1=20

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1N250 Distributor

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