IXTH1N250 Description
+150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g TO-247 G DS Tab G = Gate D = Drain S = Source Tab = Drain.
IXTH1N250 Key Features
- VDSS, VGS = 0V
- ID25, Note 1
IXTH1N250 is High Voltage Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXTH1N200P3 | High Voltage Power MOSFET |
| IXTH1N200P3HV | High Voltage Power MOSFET |
| IXTH1N170DHV | N-Channel MOSFET |
| IXTH1N300P3HV | High Voltage Power MOSFET |
| IXTH1N450HV | High Voltage Power MOSFET |
+150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g TO-247 G DS Tab G = Gate D = Drain S = Source Tab = Drain.