IXTH1N250
IXTH1N250 is High Voltage Power MOSFET manufactured by IXYS.
High Voltage Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) ≤
2500V 1.5A 40Ω
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque
Maximum Ratings
±20
±30
- 55 ... +150
°C
°C
- 55 ... +150
°C
°C
°C
1.13 / 10
Nm/lb.in.
6...
