IXTH1N450HV Description
High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A 80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M.
IXTH1N450HV Key Features
- High Blocking Voltage
- High Voltage Package
- Easy to Mount
- Space Savings
- High Power Density