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IXTH1N200P3HV - High Voltage Power MOSFET

This page provides the datasheet information for the IXTH1N200P3HV, a member of the IXTA1N200P3HV High Voltage Power MOSFET family.

Features

  • High Blocking Voltage.
  • High Voltage Packages Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 2000 V 2000 V 20 V 30 V TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM 1.0 A 0.6 A 3.0 A TC = 25C 125 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247/HV) 10..65 / 22..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-247/HV 2.5 g 6.
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