1N5550 Datasheet | Specifications & PDF Download

The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500

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The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500

(32 views)

The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500

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The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500

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The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500

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VISHAY Standard Sinterglass Diode 1N5550 to 1N5552 Vishay Semiconductors Features • Cavity-free glass passivated junction • High temperature metallu

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200 V - 1,000 V Rectifiers 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/420 1N5550 1N5551 1N5552 1N5553

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www.DataSheet4U.com POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM

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www.DataSheet4U.com POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM

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1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts D * Forward Current - 3.0 Amperes FEATURES P A T E N T

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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

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www.DataSheet4U.com POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM

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1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Quick reference data VR = 200 -

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www.DataSheet4U.com SENSITRON _____ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US JAN JANTX

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www.DataSheet4U.com POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM

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1N5550-1N5554 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (hig

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1N5550US thru 1N5554US Available on commercial versions VOIDLESS HERMETICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS Qualified to M

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www.DataSheet4U.com POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM

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1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified to MIL-PRF-19500/420

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1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION:

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