1N5711 Datasheet | Specifications & PDF Download

1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring

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® 1N 5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch

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1N5711UB, UBCA, UBCC, UBD Schottky Barrier Diode Features • Qualified to MIL-PRF-19500/444 • Available in JAN, JANTX, JANTXV and JANS • Low Reverse Le

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• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 •

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1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications The 1N5711, 1N5712, 508

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General Purpose Schottky Diodes FEATURES Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents ENVIRONMENTAL RATINGS (Maximum) Operat

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1N5711W Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation SOD-123 Features Low forward voltage drop Guard Rin

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1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN

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MCC Features l l l l Fast Switching Speed
     omponents 21201 Itasca Street Chatsworth  # $ %

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• 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED

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1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (hi

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Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Features • Low Tur

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FEAT URES 1N5711 THUR 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 MECH AN ICAL DAT A Case: Polarity: Weight: ABSOLUT E RAT IN GS(LIMI T IN G VALU ES)

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1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected

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1N5711 General Purpose Axial Lead Glass Packaged Schottky Diodes Features  Low Leakage Current  Pico Second Switching Speed  Glass Hermetically S

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Features For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward vol

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SCHOTTKY BARRIER DIODE 1N5711CSM • High Breakdown Voltage (VBR = 70V) • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for Lo

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1N5711UB, UBCA, UBCC, UBD Schottky Barrier Diode Features • Qualified to MIL-PRF-19500/444 • Available in JAN, JANTX, JANTXV and JANS • Low Reverse Le

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1N5711UB, UBCA, UBCC, UBD Schottky Barrier Diode Features • Qualified to MIL-PRF-19500/444 • Available in JAN, JANTX, JANTXV and JANS • Low Reverse Le

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• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS • • • • PER MIL-PRF-19500/444 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19

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