Compensated Deuices Incorporated
1N5711UR-1 - SCHOTTKY BARRIER DIODES
• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS • • • • PER MIL-PRF-19500/444 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19
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Avago
1N5711 - Schottky Barrier Diodes
1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 508
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STMicroelectronics
1N5711 - SMALL SIGNAL SCHOTTKY DIODE
®
1N 5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch
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Diodes Incorporated
1N5711 - SCHOTTKY BARRIER SWITCHING DIODE
1N5711
SCHOTTKY BARRIER SWITCHING DIODE Features
· · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring
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GME
1N5711L - Surface mount schottky barrier diode
Production specification
Surface mount schottky barrier diode
FEATURES
z Low Forward Voltage Drop. z Guard Ring Construction for Transient
Protectio
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Microsemi Corporation
1N5711 - SCHOTTKY BARRIER DIODES
• 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED
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EIC
1N5711 - SCHOTTKY BARRIER DIODES
1N5711 and 1N6263
VRRM : 70V , 60V
FEATURES :
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected
by a PN
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LGE
1N5711 - Small Signal Schottky Diodes
Features
For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward vol
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VPT
1N5711UBD - Schottky Barrier Diode
1N5711UB, UBCA, UBCC, UBD
Schottky Barrier Diode
Features
• Qualified to MIL-PRF-19500/444 • Available in JAN, JANTX, JANTXV and JANS • Low Reverse Le
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Micro Commercial Components
1N5711 - Schottky Barrier Switching Diode
MCC
Features
l l l l Fast Switching Speed
omponents 21201 Itasca Street Chatsworth # $
%
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Compensated Deuices Incorporated
JANTX1N5711 - SCHOTTKY BARRIER DIODES
• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 •
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M-Pulse Microwave
1N5711 - General Purpose Schottky Diodes
General Purpose Schottky Diodes
FEATURES
Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents
ENVIRONMENTAL RATINGS
(Maximum) Operat
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WEJ
1N5711W - DIODE
RoHS
1N5711W
TDFeatures .,L· Low Forward Voltage Drop
· Guard Ring Construction for Transient Protection
· Fast Switching Time
O· Low Reverse Capaci
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Taiwan Semiconductor
1N5711W - Surface Mount Schottky Barrier Diode
1N5711W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time
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Agilent
1N5711 - Schottky Barrier Diodes
Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Tur
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Vishay
1N5711 - Schottky Diodes
VISHAY
Schottky Diodes
1N5711 / 1N6263
Vishay Semiconductors
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device
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GOOD-ARK
1N5711 - Small-Signal Diode
Features
For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward
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EDCON
1N5711 - Schottky Barrier Diode
1N5711 / 1N6263
Schottky Barrier Diode
Features
1. For general purpose applications. 2. Metal-on-silicon schottky barrier device
which is protected
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CENPAK
1N5711 - Small Signal Schottky Barrier Diode
CENPAK ELECTRONICS
Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard
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Microsemi
1N5711UB - SCHOTTKY BARRIER DIODES
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com
Gort
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