1N5711-MA Datasheet | Specifications & PDF Download

R SEMICONDUCTOR FEATURES For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard

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Features ‹ For general purpose applications ‹ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward

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CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard

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1N5711 General Purpose Axial Lead Glass Packaged Schottky Diodes Features  Low Leakage Current  Pico Second Switching Speed  Glass Hermetically S

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  70V 15mA Schottky Diode – 1N5711    Small-si gnal ultra-fast switching schottky diode in bare die form Rev 1.0 01/02/19   Features:   ƒ Picose co

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FEAT URES 1N5711 THUR 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 MECH AN ICAL DAT A Case: Polarity: Weight: ABSOLUT E RAT IN GS(LIMI T IN G VALU ES)

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Features For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward vol

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® 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch

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1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching

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1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODES Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switc

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