SMD Type Schottky Diodes 1N5820 ~ 1N5822 Diodes .
Diotec Semiconductor
1N5821 - Schottky Barrier Rectifiers
1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom Ø 4.5 ±0.1 3A 20…40 V ~ DO-201 1g Repetiti.
Zowie Technology Corporation
1N5821 - SCHOTTKY BARRIER RECTIFIER
1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD 0.220(5.6) 0.190(4.8) DIA. .
ON Semiconductor
1N5821 - Axial Lead Rectifiers
Axial Lead Rectifiers 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices This series employs the Schottky Barrier principle in a large are.
Comchip Technology
1N5821-G - Schottky Barrier Rectifier
Schottky Barrier Rectifier SMD Diodes Specialist 1N5820-G Thru. 1N5822-G Forward Current: 3.0A Reverse Voltage: 20 to 40V RoHS Device Features -Fast .
Microsemi Corporation
1N5821US - 3 Amp SQ-MELF Schottky Barrier Rectifiers
1N5820US – 1N5822US and 1N6864US Available on commercial versions 3 Amp SQ-MELF Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 DESCRIP.
Kexin
1N5821 - Schottky Diodes
SMD Type Schottky Diodes 1N5820 ~ 1N5822 Diodes ■ Features ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● .
Multicomp
1N5821 - Power Diodes
1N5820 Series Power Diodes - Schottky 3A Axial DO-201AD Features: • Low forward voltage drop. • High current capability. • High reliability. • High .
Vishay
1N5821 - Schottky Barrier Plastic Rectifier
www.vishay.com 1N5820, 1N5821, 1N5822 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-201AD PRIMARY CHARACTERISTICS IF(AV) VRR.
LRC
1N5821 - Schottky Barrier Rectifiers
LESHAN RADIO COMPANY, LTD. 1N5820 thru 1N5822 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory Fla.
JGD
1N5821 - 3.0 Amp. Schottky Barrier Rectifiers
Features 1N5820 THRU 1N5822 3.0 Amp. Schottky Barrier Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surg.
Fairchild Semiconductor
1N5821 - 3.0 Ampere Schottky Barrier Rectifiers
1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverte.
MotorolaInc
1N5821 - SCHOTTKY BARRIER RECTIFIERS
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier princip.
Microsemi
1N5821 - 3 Amp Axial Schottky Barrier Rectifiers
1N5820 – 1N5822 and 1N6864 Available on commercial versions 3 Amp Axial Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 DESCRIPTION Thi.
Micro Commercial Components
1N5821 - 3 Amp Schottky Barrier Rectifier
MCC Features • • • • Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability .
STMicroelectronics
1N5821 - LOW DROP POWER SCHOTTKY RECTIFIER
® 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) 3A 40 V 150°C 0.475 V FEATURES AND BENEFITS n VER.
Kingtronics
1N5821 - SCHOTTKY BARRIER RECTIFIER
1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD ◆Plastic package ha.
EIC discrete Semiconductors
1N5821S - SCHOTTKY BARRIER RECTIFIER DIODES
1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability .
Compensated Deuices Incorporated
1N5821US - 3 AMP SCHOTTKY BARRIER RECTIFIERS
• 1N5822US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE.
NTE
1N5821 - Silicon Rectifier Diodes
1N5820, 1N5821, 1N5822 Silicon Rectifier Diodes Schottky Barrier, Fast Switching Features: D 3.0 Ampere Operation at TA = +95C Application: D For Us.
Diodes
1N5821 - 3.0A SCHOTTKY BARRIER RECTIFIERS
PART OBSOLETE - NO ALTERNATE PART 1N5820 - 1N5822 Green 3.0A SCHOTTKY BARRIER RECTIFIERS Features and Benefits Guard Ring Die Construction for T.