1N6G Datasheet | Specifications & PDF Download

M1N6 Outline 23¡ Á1 Á4 Á1 t0.3 1.3 Á4 Specifications Model Operating Voltage (V) Rated Voltage (V) 3 3 5 5 No Load Speed (r/min) 8460 13030 13760

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free

Rating: 1 ★ (2 votes)

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extr

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CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON)

Rating: 1 ★ (2 votes)

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON)

Rating: 1 ★ (2 votes)

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON)

Rating: 1 ★ (1 votes)