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No	Part Number	Description	Manufacture	PDF
210	1N80	N-CHANNEL POWER MOSFET 1N80 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers	UTC
209	1N8018	HYPER FAST SOFT RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
208	1N8019	HYPER FAST SOFT RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
207	1N8020	HYPER FAST SOFT RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
206	1N8021	HYPER FAST RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
205	1N8022	HYPER FAST RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
204	1N8023	HYPER FAST RECOVERY RECTIFIER Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering I	SSDI
203	1N8024-GA	High Temperature Silicon Carbide Power Schottky Diode 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse r	GeneSiC
202	1N8033-GA	High Temperature Silicon Carbide Power Schottky Diode 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero reverse recovery charge  Superior surge cur	GeneSiC
201	1N8034-GA	High Temperature Silicon Carbide Power Schottky Diode 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Electrically isolated base-plate  Zero reverse r	GeneSiC
200	1N81	Gold Bonded Diode	BKC
199	1N81	GOLD BONDED GERMANIUM DIODES	New Jersey Semiconductor

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