1S60 Datasheet | Specifications & PDF Download

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int

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SP6T Electromechanical Relay Switch DC to 26.5 GHz, SMA, 250 Watts, 28V Control TECHNICAL DATA SHEET PE71S6087 The PE71S6087 is a SINGLE POLE SIX T

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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isc N-Channel MOSFET Transistor AOW11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the adv

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isc N-Channel MOSFET Transistor AOTF11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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isc N-Channel MOSFET Transistor AOB11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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Advanced Power Electronics Corp. AP11S60I-HF-3 N-channel Enhancement-mode Power MOSFET Fully isolated package Simple Drive Requirement Fast Switchin

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SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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isc N-Channel MOSFET Transistor AOI11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JED

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Section I. Stratix Device Family Data Sheet This section provides designers with the data sheet specifications for Stratix devices. They contain feat

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AP11S60I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halog

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