1S60 Datasheet | Specifications & PDF Download

AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

Rating: 1 ★ (6 votes)

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor AOW11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi

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1S20 THRU 1S200  RoHS COMPLIANT   Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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AP11S60I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halog

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isc N-Channel MOSFET Transistor AOB11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

Rating: 1 ★ (4 votes)

isc N-Channel MOSFET Transistor AOT11S60L FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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Isolated Transmitter TExxxxN Series Active high precision isolated transmitter FEATURES  Two-port isolation (signal input and signal output)  Hig

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1S20 THRU

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W561XXX Data Sheet 4-TRACK PCM-MELODY WITH VOICE SYNTHESIZER (BandDirectorTM Series) Table of Contents1. 2. 3. 4. 5. GENERAL DESCRIPTION

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

Rating: 1 ★ (3 votes)