TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190.
WON-TOP
1SS190 - SURFACE MOUNT FAST SWITCHING DIODE
® WON-TOP ELECTRONICS 1SS190 SURFACE MOUNT FAST SWITCHING DIODE Pb Features High Conductance Fast Switching Surface Mount Package Ideally Suit.
Toshiba Semiconductor
1SS190 - Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 L.
LGE
1SS190 - Switching Diodes
1. N.C 2. CATHODE 3. ANODE Features Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Maximum.
JCET
1SS190 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching Diode FEATURES y Low forward voltage y Fast r.
GME
1SS190 - Surface mount switching diode
Production specification Surface mount switching diode FEATURES Low forward voltage VF=0.92V(typ). Small total capacitance:CT=2.2pF(typ). Fast.
WEITRON
1SS190 - Surface Mount Switching Diodes
Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig.
RECTRON
1SS190 - SWITCHING DIODE
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS190 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:.
LITE-ON
1SS190 - SURFACE MOUNT FAST SWITCHING DIODE
SURFACE MOUNT FAST SWITCHING DIODE 1SS190 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purp.
WEJ
1SS190 - DIODE
RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re.