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1SS384 Matched Datasheet

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No Part Number Description Manufacture PDF
1 1SS384 Silicon epitaxial planar type diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS384 pdf






1SS38 Similar Datasheet

Part Number Description Manufacture PDF
1SS388 SILICON EPITAXIAL SCHOTTKY BARRER DIODE

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
EIC
EIC
1SS388 datasheet
1SS388 DIODE (HGH SPEED SWITCHING APPLICATION)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS388 datasheet
1SS389 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS389 datasheet
1SS381 Silicon epitaxial planar type diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS381 datasheet
1SS387 High Speed Switching Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
MDD
MDD
1SS387 datasheet
1SS380 Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
MDD
MDD
1SS380 datasheet
1SS382 Silicon epitaxial planar type diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS382 datasheet
1SS385 Silicon epitaxial planar type diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS385 datasheet
1SS387 DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Toshiba Semiconductor
Toshiba Semiconductor
1SS387 datasheet
1SS380 Switching diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Rohm
Rohm
1SS380 datasheet


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