Datasheet4U Logo Datasheet4U.com

1SS384 Datasheet - Toshiba Semiconductor

1SS384 - Silicon diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes.

z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA 1SS384 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 100 1 100

1SS384_ToshibaSemiconductor.pdf

Preview of 1SS384 PDF
1SS384 Datasheet Preview Page 2 1SS384 Datasheet Preview Page 3

Datasheet Details

Part number:

1SS384

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

199.62 KB

Description:

Silicon diode.

📁 Related Datasheet

📌 All Tags