1SS385FV Datasheet - Toshiba

1SS385FV Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Characteristic Symbol Rating Unit 0.13±0.05 Maximum (peak) reverse voltage VRM 15 V 0.5±0.05 Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward c.

1SS385FV-Toshiba.pdf