Datasheet Details
- Part number
- 1SS385FV
- Manufacturer
- Toshiba ↗
- File Size
- 225.77 KB
- Datasheet
- 1SS385FV-Toshiba.pdf
- Description
- Silicon Diode
1SS385FV Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) .
1SS385FV Applications
* z Low forward voltage: VF = 0.23 V (typ. ) @IF = 5 mA z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
1 23
0.32±0.05
1.2±0.05 0.8±0.05 0.4 0.4
Characteristic
Symbol
Rating
Unit
0.13±0.05
Maximum (peak) reverse voltage
VRM
15 V
0.5±0.05
Rev
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