Datasheet Specifications
- Part number
- 1SS385FV
- Manufacturer
- Toshiba ↗
- File Size
- 225.77 KB
- Datasheet
- 1SS385FV-Toshiba.pdf
- Description
- Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) .
Applications
* z Low forward voltage: VF = 0.23 V (typ. ) @IF = 5 mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Characteristic Symbol Rating Unit 0.13±0.05 Maximum (peak) reverse voltage VRM 15 V 0.5±0.05 Rev1SS385FV Distributors
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