1SS382 Datasheet - Toshiba Semiconductor

1SS382 Silicon diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Small package Composed of 2 independent diodes. Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) 1SS382 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward curr.

1SS382_ToshibaSemiconductor.pdf