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1SS382 - Silicon diode

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Part number 1SS382
Manufacturer Toshiba Semiconductor
File Size 535.57 KB
Description Silicon diode
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Low forward voltage : VF (3) = 0.92 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.) 1SS382 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 125 mW PD (Note 2, 3) 100 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC ― JEITA ― TOSHIBA 1-2U1A Weight: 0.006g (typ.
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