1SS387 Datasheet - Toshiba Semiconductor

1SS387 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications AEC-Q101 Qualified (Note1) Compact 2-pin package ideal for high-density mounting Low forward voltage : VF (3) = 0.98 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 pF (typ.) Note1: For detail information, please contact our sales. 1SS387 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Ratin.

1SS387_ToshibaSemiconductor.pdf