1SS383 Datasheet - Toshiba Semiconductor

1SS383 Silicon diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFS.

1SS383_ToshibaSemiconductor.pdf