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1SS383 - Silicon diode

1SS383 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching * Small package * Composed of 2 indepen.

1SS383 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Toshiba Semiconductor 1SS383-like datasheet