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1SS383 - Silicon diode

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Part number 1SS383
Manufacturer Toshiba Semiconductor
File Size 249.48 KB
Description Silicon diode
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching  Small package  Composed of 2 independent diodes.  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 45 40 300 * 100 * 1* 100 * V V mA mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA TOSHIBA ― 1-2U1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.006g (typ.
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