Datasheet Details
Part number:
1SS385
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
253.06 KB
Description:
Silicon diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maxim