1SS385 Datasheet - Toshiba Semiconductor

1SS385 Silicon diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 100 1 100 V V mA mA A mW Junction temperature Tj 125 °C S.

1SS385_ToshibaSemiconductor.pdf