Click to expand full text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
1SS385
Unit: mm
z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
15 10 200 * 100 * 1* 100
V V mA mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS385 Datasheet
