Datasheet Details
- Part number
- 1SS385F
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 104.03 KB
- Datasheet
- 1SS385F_ToshibaSemiconductor.pdf
- Description
- Diode
1SS385F Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5.
1SS385F Applications
* of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORA
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