Datasheet Specifications
- Part number
- 1SS385F
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 104.03 KB
- Datasheet
- 1SS385F_ToshibaSemiconductor.pdf
- Description
- Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5.
Applications
* of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORA1SS385F Distributors
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