Datasheet4U Logo Datasheet4U.com

1SS388 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Datasheet Summary

Description

Cathode Anode 2 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Oper

📥 Download Datasheet

Datasheet preview – 1SS388

Datasheet Details

Part number 1SS388
Manufacturer SEMTECH
File Size 212.93 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1SS388 Datasheet
Additional preview pages of the 1SS388 datasheet.

📁 Similar Datasheet

  • 1SS388 - Silicon Diode (Toshiba Semiconductor)
  • 1SS388 - SILICON EPITAXIAL SCHOTTKY BARRIER TYPE (Pan Jit International)
  • 1SS388 - High Speed Switching Diode (LGE)
  • 1SS388 - Switching Diode (MCC)
  • 1SS388 - SCHOTTKY BARRIER DIODE (JCET)
  • 1SS388 - HIGH SPEED SWITCHING DIODE (Kexin)
  • 1SS388 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (LITE-ON)
  • 1SS388 - Schottky Barrier Diode (GME)
  • 1SS388 - SILICON EPITAXIAL SCHOTTKY BARRER DIODE (EIC)
  • 1SS388 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (Won-Top Electronics)
Other Datasheets by SEMTECH
  • 1SS389 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
  • 1SS314 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS352 - Silicon Epitaxial Planar Switching Diode
  • 1SS355 - SILICON EPITAXIAL PLANAR SWITCHING DIODES
  • 1SS367 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
  • 1SS368 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS369 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
  • 1SS373 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

Full PDF Text Transcription

Click to expand full text
1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts Value 45 40 100 300 1 150 125 - 40 to + 100 - 55 to + 125 Unit V V mA mA A mW OC OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Total Capacitance at f = 1 MHz Symbol VF IR CT Max. 0.
Published: |